GaN Semiconductor Device Market 2020–Global Industry Analysis, Size, Share, Trends, Market Demand, Growth, Opportunities and Forecast 2024

Global "GaN Semiconductor Device Market" 2020 Industry research report provides an In-Depth and Professional analysis that includes an executive summary, definition, and scope of the market. The GaN Semiconductor Device market is segmented on the basis of technology, end-user, products, services, market types, and applications. The segmentation is intended to give the readers a detailed understanding of the market and the essential factors comprising it. This allows giving a better description of the drivers, restraints, threats, and opportunities. It also notes down socio-economic factors that are impacting the trajectory of the GaN Semiconductor Device market.

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About GaN Semiconductor Device Market:

The GaN semiconductor device market valued at USD 833.73 million in 2018, and is expected to reach USD 2162.45 million by 2024, registering a CAGR of 17.21% over the forecast period of 2019-2024. Growing demand for radio frequency in the semiconductor market, and a prospering consumer electronics industry, particularly in LED-based lighting and displays and rise in electric vehicles, power delivery, and photovoltaic inverters are some of the major market driving factors for the GaN semiconductor devices market.- The various benefits of GaN such as its cost effective nature and elimination of cooling requirements have propelled its reach as compared to its contemporaries like silicon and gallium arsenide. The increasing adoption is also reinforced by the increase in demand for energy-efficient semiconductor devices in the recent years.- Increasing demand for smartphones, gaming devices, laptops, and TVs is expected to drive the GaN semiconductor devices market in the consumer electronics sector.- With the introduction of the 5G standard, there is an increase in demand for high-power transistors and base stations, which is augmenting the demand for GaN power semiconductors in the ICT segment.

Scope of the Report:
GaN is an emerging technology that shows promise to replace silicon MOSFETs. The various devices considered in the market studied are transistors, diodes, rectifier and diodes. The several end-user industries covered in the report are automotive, consumer electronics, aerospace and defense, medical and information & communication technology.

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The GaN Semiconductor Device Report provides key statistics on the market status of Global GaN Semiconductor Device manufacturers and is a valuable source of guidance and direction for companies and individuals interested in the industry.

  • Toshiba Corporation
  • Panasonic Corporation
  • Cree Inc.
  • GaN Systems Inc.
  • Infineon Technologies AG
  • OSRAM GmbH
  • Efficient Power Conversion Corporation
  • NXP Semiconductors NV
  • Texas Instruments
  • NTT Advanced Technology Corporation

According to the GaN Semiconductor Device report, the global market is expected to witness a relatively higher growth rate during the forecast period.

GaN Semiconductor Device market report explores the international and Chinese major GaN Semiconductor Device players in detail. In this part, the report presents the company profile, product specifications, capacity, production value, and 2015-2020 GaN Semiconductor Device market shares for each company.

After the basic information, the report sheds light on the production. Production plants, their capacities, global production, and revenue are studied. Also, the GaN Semiconductor Device Sales growth in various regions and R&D status are also covered.

Global GaN Semiconductor Device Market 2020-2024, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

Market Trend

  • Growing research activities coupled with new product launches.
  • For a full, detailed list, view our report

Market Driver

  • High Opportunity of GaN Semiconductor Device.
  • For a full, detailed list, view our report

Market Challenge

  • Complications associated with GaN Semiconductor Device procedures.
  • For a full, detailed list, view our report

The report provides key statistics on the market status of the GaN Semiconductor Device manufacturers and is a valuable source of guidance and direction for companies and individuals interested in the GaN Semiconductor Device.

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GaN Semiconductor Device Segment by Regions, the regional analysis covers:

  • North America
  • United States
  • Canada
  • Mexico
  • Europe
  • France
  • Germany

Major Key Contents Covered in GaN Semiconductor Device:

  • Introduction of GaN Semiconductor Device with development and status.
  • Manufacturing Technology of GaN Semiconductor Device with analysis and trends.
  • Analysis of Global GaN Semiconductor Device Key Manufacturers with Company Profile, Product Information, Production Information, and Contact Information.
  • Analysis of Global and Chinese GaN Semiconductor Device Capacity, Production, Production Value, Cost and Profit
  • Analysis of GaN Semiconductor Device with Comparison, Supply, Consumption, and Import, and Export.
  • GaN Semiconductor Device Analysis with Market Status and Market Competition by Companies and Countries.
  • 2020-2024 GaN Semiconductor Device Market Forecast with Cost, Profit, Market Shares, Supply, Demands, GaN Semiconductor Device market trend, Import and Export.
  • GaN Semiconductor Device Analysis of Industry Chain Structure, Upstream Raw Materials, Downstream Industry.

By knowing the potential of GaN Semiconductor Device In Future, we come up with GaN Semiconductor Device Market Research Report to provide Investors to achieve their goals in their respective field all over the world. The GaN Semiconductor Device Report focuses on providing the best returns of an investment to investors.

Table Of Content:

1 INTRODUCTION
1.1 Study Deliverables
1.2 Study Assumptions
1.3 Scope of the Study

2 RESEARCH METHODOLOGY

3 EXECUTIVE SUMMARY

4 MARKET DYNAMICS
4.1 Market Overview
4.2 Introduction to Market Drivers and Restraints
4.3 Market Drivers
4.3.1 Growth of New Industries (Virtual Reality, Wireless Charging etc.)
4.3.2 Increasing Push towards Renewable Energy Forms
4.4 Market Restraints
4.4.1 Competition from Silicon Carbide Technology
4.5 Industry Attractiveness - Porter's Five Force Analysis
4.5.1 Threat of New Entrants
4.5.2 Bargaining Power of Buyers/Consumers
4.5.3 Bargaining Power of Suppliers
4.5.4 Threat of Substitute Products
4.5.5 Intensity of Competitive Rivalry

5 MARKET SEGMENTATION
5.1 Type
5.1.1 Power Semiconductor
5.1.2 Opto-Semiconductor
5.1.3 RF Semiconductor
5.2 Devices
5.2.1 Transistors
5.2.2 Diodes
5.2.3 Rectifier
5.2.4 Power ICs
5.3 End User Industry
5.3.1 Automotive
5.3.2 Consumer Electronics
5.3.3 Aerospace & Defense
5.3.4 Medical
5.3.5 Information Communication & Technology
5.3.6 Other End-User Industries
5.4 Geography
5.4.1 North America
5.4.2 Europe
5.4.3 Asia-Pacific
5.4.4 Rest of the World

6 COMPETITIVE LANDSCAPE
6.1 Company Profiles
6.1.1 Toshiba Corporation
6.1.2 Panasonic Corporation
6.1.3 Cree Inc.
6.1.4 GaN Systems Inc.
6.1.5 Infineon Technologies AG
6.1.6 OSRAM GmbH
6.1.7 Efficient Power Conversion Corporation
6.1.8 NXP Semiconductors NV
6.1.9 Texas Instruments
6.1.10 NTT Advanced Technology Corporation

7 MARKET OPPORTUNITIES AND FUTURE TRENDS

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