Gallium Nitride (GaN) is known for its usage in the LED diodes and is a third band gap semiconductor. The compound is formed of Wurtzite crystalline structure and is very tough in nature and its features make it the perfect alternative for pure silicon. Its ability to work in high frequency and power to emit high brightness & intensity when used in opto-semiconductor are providing traction to the gallium nitride semiconductor devices market. Market Research Future (MRFR) has studied the gallium nitride semiconductor devices market well to predict an 8% CAGR during the forecast period (2017–2023). At the same time, surpassing a valuation of USD 27 billion would be an easy task for the gallium nitride semiconductor devices market.
Wide-scale application in the automotive, defense, space, consumer electronics, healthcare, and other sectors are expected to provide the gallium nitride semiconductor devices market substantial traction. Its features like high operating temperature, high-speed switching capacity, high current density, low resistance, and a high dielectric strength are providing the market enough momentum.
MRFR’s take on the gallium nitride (GaN) semiconductor devices market segments the report by type, wafer size, devices and end-user. Such a segmentation is needed for an in-depth analysis of trends.
By type, the gallium nitride semiconductor devices market can be segmented into Opto semiconductor, power semiconductor and RF semiconductors.
Based on the wafer size, the gallium nitride semiconductor market includes 2 inches, 4 inches and 6 inches and above.
Based on the device, the gallium nitride semiconductor market comprises lighting & laser, transistor, diode, rectifier, power ICs, amplifiers, power drivers, supply& inverter, and switching systems.
Based on the end-users, the gallium nitride semiconductor devices market consists automotive, aerospace & defense, consumer electronics, telecommunication, and medical. The aerospace & defense segment has substantial lead as its use in maintaining electronic devices are profound.
GaN Success or Advantages
It takes a suitably matched and configured driver to make sure that the switching device — GaN operates to its full qualifications and does not have unplanned issues. More commonly, the role of this driver in the device is to be the electrical line among the lower-voltage digital output of the microprocessor-based controller or the same circuitry and the higher-voltage with high current, slew-rate demands of the power-switching device.
With this, there is much more to the role of RF GaN device than this. The need for the current high enough rate to swiftly charge the input capacitance of the device and to turn it on, yet it must quickly and crisply pull that charge from the gate input without ringing or overshoot.
At most, the factors define the top-tier concerns of GaN devices and its advantages —
The maximum gate voltage allowable is the gate threshold voltage and the body diode voltage drop. The gate-source voltage for an improved GaN device is 6V, and this simplifies the challenge of generating the needed turn-on and turn-off voltages and electric. The gate voltage is also lower than it is for most power MOSFETs and has a lower negative temperature coefficient, which also simplifies driver-compensation issues.
About Market Research Future:
At Market Research Future (MRFR), we enable our customers to unravel the complexity of various industries through our Cooked Research Reports (CRR), Half-Cooked Research Reports (HCRR), Raw Research Reports (3R), Continuous-Feed Research (CFR), and Market Research and Consulting Services.
Market Research Future
+1 646 845 9312