GaN Power Device Market Size, Growth, Opportunity And Forecast To 2025

GaN Power Device Market delivers a succinct analysis on industry size, regional growth and revenue forecasts for the upcoming years. The report further sheds light on significant challenges and latest growth strategies adopted by manufacturers who are a part of the competitive spectrum of this business domain.

The huge entire addressable markets such as industrial systems, power distribution systems, turbines, heavy electrical systems, advanced industrial control systems, heavy machinery, and electromechanical computing/computer systems are among the major reasons for the quicker development of GaN power device market.

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Scope of The Report:

Gallium Nitride (GaN) transistors have developed as an advanced performance option of silicon-supported transistors, due to their capability of fabricating more compact devices for a specific breakdown voltage and resistance value over silicon devices.

The major players included in the global GaN power device market forecast are,

Qorvo, Cree, Microsemi Corporation, MACOM, Efficient Power Conversion, Analog Devices, Transphorm, Integra Technologies, Texas Instruments, Navitas Semiconductor, Northrop Grumman Corporation, Sumitomo Electric, Polyfet, Qromis, Sumitomo Electric, TOSHIBA, Panasonic

Rising Usage Of GaN RF In Millimeter-Wave And Microwave Electronics To Power The Growth In The Market

The GaN Power Device Market for RF power devices had the biggest share. The requirement for high power in the ultrahigh frequency (UHF), very high frequency (VHF), and microwave bands has resulted in the requirement for these devices, which can provide hundreds of watts at RF frequencies up to 10 GHz and more. Most of these machines are created from GaN. Initially designed for IED (improvised explosive device) jammers in Iraq, GaN RF power has surfaced as the tech of choice for all new millimeter-wave and microwave electronics including satellite, radar, electronic warfare, and communications.

GaN Power Device Market Key Segments:

By Device Type:

GaN Power Discrete Devices, GaN Power ICs, GaN Power Modules

By Industry Vertical Type

Consumer Electronics, IT & Telecommunication, Automotive, Aerospace & Defense, Others

Market by Regional Analysis

North America (USA, Canada, Mexico), Europe (UK, France, Germany, Russia, Rest of Europe), Asia-Pacific (China, South Korea, India, Japan, Rest of Asia-Pacific), LAMEA, Latin America, Middle East, Africa

Asia Pacific Is Predicted To Have The Biggest Share Of The GaN Power Device Market During The Coming Period

Asia Pacific is predicted to have the biggest share of the GaN power device market during the coming period due to the increasing requirement for power machines in the computing, industrial, automotive and military, telecommunications, and aerospace and defense sectors in emerging Asian nations such as Japan, China, the Philippines, Taiwan, and India. In addition to this, the electric vehicle production and EV charging markets, along with rising renewable energy creation are powering the development of the market in Asia Pacific. Asia Pacific had the biggest share of the global GaN power device market due to the rising requirement for these devices in different applications such as computing, industrial, consumer and enterprise, telecommunications, aerospace and defense, and automotive and military in Asian countries such as Japan, China, the Philippines, Taiwan, and India.

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